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20mw-50mw 1310nm Pulse Laser Diode

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Description

The 20mw-50mw 1310nm pulse laser diode uses a DFB chip and features a maximum output power of 60mw.This high performance makes it an ideal pulse laser diode for use in OTDR systems.

 

Absolute Maximum Ratings 

Parameter Symbol Min. Max. Unit
Pulsed Forward Current IFP   500 mA
Reverse Voltage VR   2 V
Reverse Voltage (monitor PD) VRM   10 V
Reverse Current (monitor PD) IFPM   2 mA
Operating Temperature TC 0 60 °C
Storage Temperature Tstg -40 85 °C
Lead Soldering Temperature Tsld   260(10s) °c
Relative Humidity (Noncoagulable) RH   85

 

Optical & Electrical Characteristics 

Parameter Symbol Min. Typ. Max. Unit Notes
Forward Voltage VFP   2.0 2.5 V IFP = 200 mA, PW = 10μs, Duty = 1%
Threshold Current Ith   20 35 mA  
Optical Output Power From SM Fiber Pf 20   50 mW IFP =200 mA, PW = 10μs, Duty = 1%
Center Wavelength λc 1290 1310 1330 nm IFP = 200 mA, PW = 10μs, Duty = 1%
Spectral Width σ     4 nm RMS (-3 dB)
Rise Time tr   0.5 2.0 ns 10-90%
Fall Time tf   0.5 2.0 ns 90-10%
Monitor Current Im 0.05   2 mA VRM = 5 V 

 

 

 
Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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