The balanced photodetector consists of two 50 GHz waveguide-integrated photodiodes on one single chip. As a single-balanced photodetector the configuration ensures excellent uniformity of the paired photodiodes and their integrated biasing network. Due to optimized alignment of the waveguide and photodiode design, a linear frequency response is guaranteed even at high optical powers. An integrated 50Ω termination allows excellent matching with the electrical output signal. Tailored configurations are available, e.g. FT-DV dual pair and quad sets, including fiber matching and optical connector customization.

The FT-DV is a compact module that is based on an advanced waveguide photodetector chip integrated with a Bias-Tee. The HP-PD utilizes a mode-converting tapered waveguide for efficient fiber-to-chip coupling and a 1×4 Multi-Mode Interference (MMI) Coupler. The optical signal is split by the MMI coupler into 4 equal parts and then it is fed into an array of 4 photodiodes which are connected in-parallel. It has a responsivity of 0.52 A/W @ 1550 nm and a high saturation photocurrent of 35 mA @ 20 GHz. The HP-PD is capable of delivering 6 dBm RF output power @ 20 GHz and 3 dBm @ 50 GHz. The device exhibits a high linearity with typical OIP3 values above 20 dBm at a frequency of 40 GHz.

The photoreceiver module FT-RV2022(A) is a single ended front-end with a high gain of typically 500 V/W and a bandwidth of 33 GHz. The photoreceiver module FT-RV2022(A) contains a waveguide-integrated PIN-photodiode (PD) and a transimpedance amplifier (TIA) with limiting output buffer. An integrated feedback loop optimizes the performance in the frequency and/or time domain with respect to different optical input power. Due to the limiting output buffer the output voltage swing is limited to approx. 400 msV. Incorporated blocking capacitors enable AC output coupling.

The FT-DV2120 is a compact module that is based on a modified uni-travelling carrier (MUTC) photodetector chip. The FT-DV2120 is not matched to 50Ω. For applying a bias voltage of -6V, an external bias-Tee is required. It has a responsivity of 0.55 A/W (1550 nm) and a high saturation photocurrent of 150 mA @ 10 GHz. The Ultra-high power PD is capable of delivering ≥ 22 dBm RF output power @ 10 GHz. The device exhibits a high linearity with typical OIP3 values above 30 dBm at a frequency of 10 GHz.